A METHOD OF FORMING DUAL GATE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a gate of a semiconductor device is provided to suit for the formation of dual gate by diffusing and depositing the different conductivity type gates. CONSTITUTION: A first insulation layer(22) is formed on a first conductivity type semiconductor substrate(21) with a field oxidation layer. A first un-doped conductive layer(23) is formed on the first insulation layer. A second conductive layer(24) is doped with a first conductivity type impurities on the first conductive layer. A second insulation layer(25) is formed on the second conductive layer. A part of the second insulation layer, second conductive layer and the first conductive layer is removed. A second conductivity type impurities are doped on the surface remaining, the part exposed and the side of the second insulation layer to form a third conductive layer(27). The surface of the third conductive layer is planarized. The remaining second insulation layer is removed. The first conductivity type impurities of the second conductive layer are diffused to the remaining first conductive layer. The first, second and third conductive layers are patterned to form a gate.