PUMPING POWER CIRCUIT FOR INTEGRATED CIRCUIT MEMORY DEVICE AND PUMPING CHARGE CONTROL METHOD THEREOF

摘要

PURPOSE: A boosting power circuit of a memory IC and a method for controlling a charge quantity of boosting power are provided to adjust a charge quantity of boosting power in a wafer state without a reprocessing of masking/metal processing. CONSTITUTION: A first fuse is connected to a first power unit. A second fuse is connected to the second fuse. A boosting controller(123) is connected to the first and second fuses, and generates the first and second control signals according to power voltage transmitted from the first and second fuses. A boosting enable part(111) inputs the first and second control signal as well as a boosting enable signal. And generates the third and fifth control signals according to the first and second enable signals and the boosting enable signal. A boosting part(113) inputs the third and fifth control signals, and generates a boosting power which is changed in response to the third and fifth control signals.