TRENCH FORMING METHOD, ELEMENT ISOLATION METHOD USING THE TRENCH AND MANUFACTURINGG METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a trench, a method for dividing devices and a method for fabricating a semiconductor device thereby are provided to control the depth of the trench easily by adjusting the depth of an oxide layer, which is used as an etching stop layer in a trench etching process, in the semiconductor substrate. CONSTITUTION: An oxide film(22) is formed on a semiconductor substrate(100) by a predetermined depth. A photoresist is deposited on the semiconductor substrate(100), exposed by using a mask, and developed, so that a mask pattern is formed. The semiconductor substrate(100) is etched by using the oxide film(22) as an etching stop layer and applying the mask pattern, so that a trench(15) is formed. Then, the mask pattern is removed.