| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to form a metal oxide through an oxygen ion implantation into a metal thin film used as an electrode of the capacitor, and to improve the reliability of a memory device by reducing a leakage current of a high dielectric material and by increasing a breakdown voltage. CONSTITUTION: An ion implantation buffer film is formed on the whole surface of a semiconductor substrate where a metal layer(10) as a capacitor electrode is formed. And, a metal oxide(17), that is, a dielectric film is formed on the semiconductor substrate by injecting an oxygen ion into the substrate, and then the ion implantation buffer film is removed. The metal layer is formed with a tungsten, or an aluminum, or a titanium, or a tantalum, and the thickness of the metal layer is about 1000 angstrom. After removing the ion implantation buffer film, a conductive layer(20) used as a top electrode of the capacitor is formed on the whole surface of the resulted structure.
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