发明名称 |
Verfahren zur Herstellung epitaktischen Halbleitermaterials |
摘要 |
A method of making an epitaxial material in a CVD reactor by growing an epitaxial layer on a Si wafer so as to form regions contg. misfit dislocations comprises cooling the wafer 50 deg C from its original temp., introducing a Ge-contg. gas into the reactor to grow a Si layer contg. 2-3% of Ge (38), purging the reactor and heating the wafer to the original temp. and growing a Ge-free layer (46). The chamber is purged again and a second Ge-free layer (42) grown, which is etched and partly removed, and the chamber again purged. |
申请公布号 |
DE69425787(D1) |
申请公布日期 |
2000.10.12 |
申请号 |
DE1994625787 |
申请日期 |
1994.04.20 |
申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
CHAN, JOSEPH Y.;LATERZA, LARRY;GARBIS, DENNIS;EINTHOVEN, WILLEM G. |
分类号 |
H01L21/205;H01L21/20;H01L21/22;H01L21/329;H01L29/165;H01L29/32;(IPC1-7):H01L21/20;H01L21/322 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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