ELECTROCHEMICAL ETCHING INSTALLATION AND METHOD FOR ETCHING A BODY TO BE ETCHED

摘要

The invention relates to an electrochemical etching cell (1) for etching a body (15) which is to be etched and which is comprised, at least superficially, of a material to be etched. Said etching cell (1) comprises at least one chamber filled with an electrolyte and is provided with a first electrode (13), said first electrode being comprised, at least superficially, of a first electrode material, as well as with a second electrode (13') that is comprised, at least superficially, of a second electrode material. In addition, the body (15) to be etched is brought, at least in areas, into contact with the electrolyte. The first electrode material and the second electrode material are selected such that, after etching, the body (15) to be etched is not contaminated and/or the properties thereof are not impaired by the electrode materials. The electrode materials are, in particular, comprised of the same materials as those of the etching material. The invention also relates to a method for etching a body (15) to be etched while using said etching cell (1), whereby the first and/or second electrode (13, 13') is/are used as sacrificial electrodes. The inventive etching cell is especially suited for etching silicon wafers in a CMOS-compatible production line.