| 摘要 |
<p>A magnetic recording medium including an alignment control film of an L10 crystal structure, L21 crystal structure, f.c.c. crystal structure, or B2 (CsCl) crystal structure containing B formed on a substrate and a Co alloy magnetic film formed directly on the alignment control film or through an underlying film of Cr or a Cr alloy on the alignment control film, exhibiting a high coercive force, producing little noise, and not being influenced by thermal fluctuation. A magnetic storage device comprising a combination of such a magnetic recording medium, a driver for driving the magnetic recording medium in a recording direction, a magnetic head having a recording part and a reproducing part opposed to respective sides of the magnetic recording medium, means for moving the magnetic head relative to the magnetic recording medium, and a recording/reproduced signal processing means for processing the waveforms of the input/output signals to/from the magnetic head. By thus combining the magnetic recording medium and the magnetic head having an element exclusively used for reproduction making the use of magnetoresistance effect, a magnetic storage device having a recording density of more than 3 gigabits per square inches is provided.</p> |
