| 摘要 |
A polymer of parylene is desirable as an inter-level insulating layer in semiconductor circuits because of its small dielectric constant. However, dimers and monomers of parylene in the source gas are taken into the deposited polymer layer during the deposition. These residual dimers and monomers outgas during the deposition of silicon oxide over the polymer layer, which tends to result in peeling from the polymer layer. In order to prevent the silicon dioxide layer from peeling from the resultant semiconductor structure, the polymer layer is annealed before deposition of the silicon oxide for first releasing the residual dimers and monomers from the polymer layer.
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