发明名称 |
Embedded dielectric film for quantum efficiency enhancement in a CMOS imaging device |
摘要 |
The present invention is an image sensor and its fabricating method. The image sensor comprises a photodiode and a dielectric structure. The photodiode is responsive to an amount of incident light from a light source. The dielectric structure is on top of the photodiode and is placed between the photodiode and an inter-level dielectric (ILD) oxide layer. The dielectric structure contains a dielectric material. The ILD oxide layer is made of an oxide material and has an ILD oxide thickness.
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申请公布号 |
US6130422(A) |
申请公布日期 |
2000.10.10 |
申请号 |
US19980106738 |
申请日期 |
1998.06.29 |
申请人 |
INTEL CORPORATION |
发明人 |
BAWOLEK, EDWARD J.;SUNDAHL, ROBERT C.;LANDAU, BERNI W.;GOSPE, STEPHEN B.;UPPAL, JACK S.;KANG, JUNG S. |
分类号 |
H01L27/146;(IPC1-7):H01L27/00 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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