发明名称 SEMICONDUCTOR THIN FILM, FORMATION OF SEMICONDUCTOR FILM AND DEVICE FOR FORMING SEMICONDUCTOR FILM
摘要 PROBLEM TO BE SOLVED: To increase the purity of a film by using an electrode or a metal essentially consisting of carbon as a substrate and forming a film on the metallic surface by a thermal spraying device having an electrode applied with a substance essentially consisting of carbon. SOLUTION: In a plasma generating part, at least either an anode 11 or a cathode 12 is composed of a substance essentially consisting of carbon, so that the intrusion of W or Cu as an electrode material can be suppressed. In consideration of the faces of durability such as corrosion resistance, oxidation resistance and wear resistance and strength, amorphous carbon having high density is preferably used. Moreover, even in the case the surfaces of the anode made of Cu and the cathode made of W are coated with a substance essentially consisting of carbon, similar effect can be obtd. Discharge is allowed to occur between such electrodes to crack gaseous Ar, or the like, and to generate high temp. plasma, and silicon raw material powder 18 is continuously introduced into the plasma, is dissolved or decomposed and is moreover deposited on a substrate 13 as it is to form a silicon film 14.
申请公布号 JP2000282208(A) 申请公布日期 2000.10.10
申请号 JP19990089176 申请日期 1999.03.30
申请人 TOSHIBA CORP 发明人 INAGAKI HIROTAKA;KAMATA ATSUSHI
分类号 H01L31/04;C23C4/00;C23C4/02;C23C4/04;C23C4/18;H01L21/208;(IPC1-7):C23C4/00 主分类号 H01L31/04
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