| 发明名称 |
Self-planarizing DRAM chip avoids edge flaking |
| 摘要 |
The dummy oxide used to form DRAM capacitor cells is left in place over the peripheral transistors, reducing the height difference between the DRAM array and the peripheral circuitry and protecting against edge effects.
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| 申请公布号 |
US6130126(A) |
申请公布日期 |
2000.10.10 |
| 申请号 |
US19990339728 |
申请日期 |
1999.06.24 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
IWAKIRI, TAKASHI |
| 分类号 |
G11C16/04;H01L21/02;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
G11C16/04 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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