发明名称 Copper (1) precursors for chemical deposit in gas phase of metallic copper
摘要 PCT No. PCT/FR98/00518 Sec. 371 Date Dec. 15, 1999 Sec. 102(e) Date Dec. 15, 1999 PCT Filed Mar. 13, 1998 PCT Pub. No. WO98/40387 PCT Pub. Date Sep. 17, 1998The invention concerns complex compounds of oxidised copper (+1) stabilised by a ligand for the gas phase chemical deposit of copper in which copper is coordinated with a beta -diketonate and the ligand is an alkyne of which the triple bond is partially deactivated by one or two groups slightly attracting the electrons by said alkyne.
申请公布号 US6130345(A) 申请公布日期 2000.10.10
申请号 US19990380948 申请日期 1999.12.15
申请人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE 发明人 DOPPELT, PASCAL
分类号 C07F1/08;C07F7/08;C23C16/18;H01L21/285;(IPC1-7):C07F1/08;C23C16/00 主分类号 C07F1/08
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