Process for producing organically modified oxide, oxynitride or nitride layers by vacuum deposition

摘要

PCT No. PCT/DE96/02434 Sec. 371 Date Jul. 22, 1998 Sec. 102(e) Date Jul. 22, 1998 PCT Filed Dec. 13, 1996 PCT Pub. No. WO97/23661 PCT Pub. Date Jul. 3, 1997Method for producing at least one organically-modified oxide, oxinitride or nitride layer by vacuum coating on a substrate through plasma-enhanced evaporation of evaporation material comprising nitride-forming evaporation material and one of oxide and suboxide evaporation material, wherein the at least one layer is deposited through plasma-enhanced, reactive high-rate evaporation of the evaporation material with use of gaseous monomers and a reactive gas including at least one of oxygen and nitrogen, and wherein the evaporation material, gaseous monomers, and reactive gas pass through a high-density plasma zone immediately in front of the substrate. A method for producing at least one organically-modified oxide, oxinitride or nitride layer by vacuum coating on a substrate through plasma-enhanced evaporation of one of oxide and suboxide evaporation material, wherein the at least one layer is deposited through plasma-enhanced, reactive high-rate evaporation of the evaporation material with use of gaseous monomers and a reactive gas including at least one of oxygen and nitrogen, and wherein the evaporation material, gaseous monomers, and reactive gas pass through a high-density plasma zone immediately in front of the substrate. Substrates with an organically-modified oxide, oxinitride or nitride layer, as produced by the methods, wherein the at least one layer deposited by plasma-enhanced, high-rate vapor deposition includes more than 50 wt% of inorganic molecules and less than 50 wt% of partially cross-linked organic molecules.