发明名称 VAPORIZER, TREATING DEVICE, TREATMENT AND PRODUCTION OF SEMICONDUCTOR CHIP
摘要 PROBLEM TO BE SOLVED: To stately feed a treating medium in a gaseous state with high flow rate control by providing a 1st heater heating an introducing part receiving a treating medium and the treating medium, an outlet part exhausting the heated treating medium, a 2nd heater heating the outlet part and a control part controlling the heater so as to heat the outlet part at a temp. higher than the eaporating temp. of the treating medium. SOLUTION: A 1st heater 146, a 1st thermocouple 148 and a 1st heater control device 150 operate so as to heat a liq. material of hexafluoroacetylacetonatetrimethylvinylsilane-copper Cu (hfac) TMVS mixed with carrier gas at a 1st heating part 147 at a temp. higher than its evaporating temp. A 2nd heater control device 156 controls a 2nd heater 152 in such a manner that, when the temp. of a 3rd heating part is, e.g. 68 deg.C, the temp. of a 2nd heating part 151 is, e.g. set to 65 deg.C to suppress the decomposing reaction.
申请公布号 JP2000282242(A) 申请公布日期 2000.10.10
申请号 JP19990094537 申请日期 1999.04.01
申请人 TOKYO ELECTRON LTD 发明人 KOJIMA YASUHIKO;KUBO KENICHI;BUZAN BANSON;YOSHIKAWA HIDEKI
分类号 H01L21/205;C23C16/18;C23C16/448;(IPC1-7):C23C16/448 主分类号 H01L21/205
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