| 摘要 |
PROBLEM TO BE SOLVED: To obtain a thin film having a suitable compositional ratio at a high speed while the amt. of fluorine-contg. gas to be consumed is suppressed by feeding the vicinity of a target with sputtering gas composed of rare gas, moreover feeding the vicinity of a body to be treated with reaction gas contg. fluorine and helium, generating discharge on a space between target and the body to be treated and forming a film of fluoride on the body to be treated. SOLUTION: The flow of sputtering gas and the flow of a reaction gas are separated with a grid board 6 as a boundary. Thus, the plasma of the sputtering gas is confirmed to a space between the grid board 6 and a target 1, is made hard to arrive at a substrate 2 beyond the grid board 6 and does not damage the face to be deposited in the substrate 2. On the other hand, the reaction gas is present in a space between the grid board 6 and the substrate 2 and is made hard to arrive at the target 1 through the opening hole of the grid board 6. In this way, it is reacted with target constituting atoms preferentially sputtered on the face to be deposited, so that the overreduction of fluorine does not occurs, and a satisfactory compd. thin film can swiftly be formed. |
