| 摘要 |
PROBLEM TO BE SOLVED: To obtain an oxide dielectric film high in resistance deteriorating resistance by providing a 2nd gas introducing system introducing gas contg. hydrogen atoms into a vacuum vessel. SOLUTION: At first, while sputtering gas composed of O2 and Ar is introduced from a sputtering gas introducing system 2, exhaustion is executed at a fixed exhausting rate by an exhausting system 3, and the gas pressure in a vacuum vessel 1 is fixedly held. Then, voltage is applied so as to obtain a desired discharge electric power to form and retain plasma. In this stage, gaseous H2O is introduced from a gaseous H2O introducing device 7, and after the passage of a prescribed time, a shutter 8 is opened, and the formation of an SrTiO3 film on a base substrate 11 is started. At the point of time in which predetermined sputtering time has been passed, the film formation is finished. The obtd. SrTiO3 film exhibits a remarkable resistance to deterioration when being applied to a high temp. energizing test in which bias application is executed, e.g. at 200 deg.C under 500 kV/cm.
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