发明名称 |
Semiconductor device with fast write recovery circuit |
摘要 |
A semiconductor memory device including a fast write recovery circuit. The semiconductor memory device has a memory array, a sense amplifier and the fast write recovery circuit. Before the end of a precharging operation, a last bit of data is written into a memory cell of the memory by the sense amplifier, as well as by the fast write recovery circuit from the other end. Thus, the time required for writing the last bit of data is shortened to prevent from writing a fragmental data into the memory cell in a transient write cycle. Furthermore, a write operation with a high speed can be executed with being restricted by layout.
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申请公布号 |
US6130847(A) |
申请公布日期 |
2000.10.10 |
申请号 |
US19990358339 |
申请日期 |
1999.07.21 |
申请人 |
UNITED MICROELECTRONICS CORP.;UNITED SILICON INCORPORATED |
发明人 |
HUANG, SHIH-HUANG;LU, HSIN-PANG |
分类号 |
G11C7/12;G11C7/22;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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