Semiconductor device having gate oxide formed by selective oxide removal and method of manufacture thereof

摘要

A semiconductor device having a gate oxide layer formed by selective removal of the gate oxide layer and a process for manufacturing such a device is disclosed. A gate oxide layer is formed on a substrate. The gate oxide layer is selectively removed in a controlled ambient to reduce the thickness of the gate oxide layer. A gate electrode is disposed on the gate oxide layer. In accordance with one particular aspect of the process, the controlled ambient includes an NF3 bearing gas, which is flowed over the gate oxide layer to remove portions of the oxide layer.