发明名称 |
Deposition rate control on wafers with varying characteristics |
摘要 |
The present invention is a method and apparatus for depositing a film on a substrate. According to the present invention a characteristic of a substrate is determined. The substrate is then heated by heat from an upper heat source and heat from a lower heat source wherein the ratio of heat supplied from the upper heat source relative to the lower heat source is dependent upon the determined wafer characteristic.
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申请公布号 |
US6130105(A) |
申请公布日期 |
2000.10.10 |
申请号 |
US19970927103 |
申请日期 |
1997.08.28 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
REDINBO, GREGORY F.;HEY, H. PETER W. |
分类号 |
C23C16/48;C23C16/52;(IPC1-7):G01R31/26;H01L21/66 |
主分类号 |
C23C16/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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