Address decoding scheme for DDR memory

摘要

Circuits and a method are disclosed for a semiconductor memory which decode from a system supplied input address two outputs which are either adjacent or boundary adjacent to each other. The two decoded outputs derived from the input address select then, in one cycle, two locations in a Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM). The circuits producing the two decoded outputs allow for sequential and interleaved mode, for data bursts of various lengths, and for addressing of redundant columns.