| 摘要 |
A high dielectric constant material containing tantalum expressed by chemical formula TaxOyNz, where x, y, and z are each a value which in total yield 1, z is 0.1 or higher but 0.625 or lower, y is 0 or higher but 0.6 or lower, and 0.4y and 0.6z in total equals to the value of x or lower, and a process for depositing a film of the material by means of chemical vapor deposition using CpmTa(N3)n, where Cp represents cyclopentane, and m+n=5, or using a gaseous tantalum-containing organometallic compound, or by a means comprising plasma treatment under a gas containing nitrogen. Also claimed are a semiconductor device and a MOS transistor using the high dielectric film containing tantalum.
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