| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric thin film having a high permittivity. SOLUTION: This dielectric thin film is made of >=95 vol.% perovskite-type compound oxide containing Pb, Mg, Mb, Ti and Zr as metal elements and <=5 vol.% pyrochlore-type compound oxide Pb, Mg, Mb, Ti and Zr as metal elements. The average particle diameter of pyrochlore-type particles 2 is <=0.05 μm and the average particle diameter of perovskite-type particles 1 is >=0.5 μm. The thin film has a microstructure where fine-grain pyrochlore-type particles 2 fill up gaps between perovskite-type particles 1. |
