发明名称 Method for fabricating a flash memory
摘要 A method for fabricating a flash memory forms a diffusion region in the substrate at one side of the first polysilicon layer. Formation of the diffusion region is preceded by a number of steps. First, the first polysilicon layer is patterned. Then, an implantation step is performed to self-align the polysilicon layer, thereby forming implantation regions in the substrate at both sides of the first polysilicon. One of these implantation region is used for a buried bit line. Subsequently, a dielectric layer is formed over the first polysilicon layer, and the second polysilicon layer is patterned to form a control gate and the first polysilicon layer is further patterned to form a floating gate.
申请公布号 US6130131(A) 申请公布日期 2000.10.10
申请号 US19980128814 申请日期 1998.08.04
申请人 UNITED MICROELECTRONICS CORP. 发明人 CHANG, KUANG-YEH
分类号 G11C16/04;G11C16/10;G11C16/16;H01L21/336;(IPC1-7):H01L21/824 主分类号 G11C16/04
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