| 摘要 |
A process for the production of a cold cathode field emission device comprising the steps of; (A) forming a patterned electrode layer on a dielectric supporting substrate, (B) forming an insulating interlayer on the dielectric supporting substrate and the electrode layer, (C) forming a gate electrode constituted of a first conductive layer on the insulating interlayer, (D) forming an opening portion which penetrates through at least the insulting interlayer and has a bottom portion where the electrode layer is exposed, (E) forming a side-wall of an insulating material on the side wall of the opening portion, to decrease the opening portion in diameter, (F) forming a second conductive layer on the entire surface including the inside of the opening portion by a physical or chemical vapor deposition method, (G) etching back the second conductive layer to form an emitter electrode shaped in the form of a column and constituted of the second conductive layer in the opening portion, and (H) removing at least an upper portion of the side-wall. |
