| 摘要 |
<p>PROBLEM TO BE SOLVED: To easily emit electrons and resolve a problem of a high operating voltage by forming a projection, which is sharpened at the tip and is made of a carbonic electron emitting material, on top of a lug formed on a conductive structural substrate. SOLUTION: A thermal oxidation SiO2 layer 24 is formed on an n-type Si substrate 21 by dry oxidation, resist 28 is applied on it by spin coating, patterning such as exposure and development is applied, and the thermal oxidation SiO2 layer 24 is etched by an NH4/HF mixed aqueous solution to form a mask 22. The thermal oxidation SiO2 layer 24 is removed by etching, and a projection 25 of a carbonic electron emitting material is selectively grown only on top of a lug 23 by a hot filament CVD method. A SiO2 layer 26 as an insulating layer and a Mo layer 27 as a gate layer are formed, the resist 28 is applied, and the tip of an emitter is exposed by ashing. The projection 25 is exposed, the resist 28 is removed, and the gated emitter coated with the carbonic electron emitting material is obtained.</p> |
