| 摘要 |
<p>PROBLEM TO BE SOLVED: To reinforce a chuck force by a method wherein a shielding material layer intervenes between chuck electrode layers of different poles disposed adjacently in a direction of an insulating substrate face. SOLUTION: An insulating substrate 2 constituting an electrostatic chuck 1 is composed of an aluminum nitride sintered compact of a dielectric. Since the insulating substrate 2 chucks simultaneously a plurality of silicon wafers W1 as matters to be attracted, it is formed so as to have an area several times that of the silicon wafer W1. As a degree of flatness of a chuck face S1 increases, namely a surface roughness decreases, a Johnson-Rahbeck power increases. The insulating substrate 2 has a multilayer structure, and is formed internally with chuck electrode layers 3, 4, and a heater electrode layer. The chuck electrode layer 3 of a positive pole and the chuck electrode layer 4 of a negative pole are together positioned in a layer close to the chuck face S1. A shielding material layer 6 intervenes between straight line parts 3a, 4a of the chuck electrodes 3, 4 of invert poles. Thus, in order to attain a predetermined chuck force, even if a large DC voltage is applied, the electrostatic chuck 1 does not lead to dielectric breakdown.</p> |
