| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element with improved thermal stability in the current block layer, while hardly generating cracks in a current block layer. SOLUTION: A first n-type current block layer 12a containing Al or B and a second n-type current block layer 12b containing In are laminated alternately. The second n-type current block layer 2b has a band gap smaller than that of the first n-type current block layer 12a. The first layer 12a in the current block layers includes at least boron or aluminum. Then, the difference in refractive indexes between the current block layer and a second nitride-based semiconductor layer in the striped opening is made large, and thermal stability is obtained in an actual refractive waveguide type structure. The second layer if the current block layers, however, contains iridium, so that the strain of the first layer that contains boron or aluminum can be absorbed in the second layer, and cracks can be prevented.
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