MANUFACTURE OF SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor storage device which can improve the breakdown voltage of a flash memory by selective epitaxial growth. SOLUTION: This manufacturing method of a semiconductor storage device forms a flash memory hybrid logic LSI in one wafer. A process masking a logic LSI part 1A with a resist 9 and eliminating a protective oxide film 4 of a flash memory 1B, a process using the protective oxide film 4 as a mask and epitaxially growing a thick silicon film 7 on a SOI body 3, and a process eliminating the protective oxide film 4 are performed in this order.