| 摘要 |
PROBLEM TO BE SOLVED: To obtain a group III nitride laser diode low in oscillation starting current by doping a p-type conductive layer made of AlGaInN with dopant to be an acceptor and simultaneously with Si. SOLUTION: After a GaN buffer layer 2 is grown on an Si substrate 1, a GaN contact layer 3 and an AlGaN clad layer 4 are grown. Subsequently, an InGaN active layer 5 is grown and an AlGaN clad layer 6L as a p-type conductive layer and a GaN contact layer 7L are grown on the active layer 5 in this order. The A1GaN clad layer 6L and the GaN contact layer 7L are simultaneously doped with dopant to be an acceptor and simultaneously with Si. As a result, the resistance of the AlGaN clad layer 6L and GaN contact layer 7L is reduced and a III-group nitride laser diode low in oscillation starting current is obtained.
|
