| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory, in which the holding characteristic can be improved by preventing leakage currents from flowing through a tunneling oxide film, even if a tunnel oxide film is deteriorated and a leakage current path is formed. SOLUTION: In this nonvolatile semiconductor memory, a tunneling oxide film 13, a floating gate electrode 14, an interlayer insulating film 15, and a control gate electrode 16 are formed on a semiconductor substrate 20. The floating gate electrode 14 is formed of polysilicon, and an acceptor type dopant region 21 and a donor type dopant region 22 are formed inside the floating gate electrode 14.
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