| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which realizes excellent electrical connection of a wiring layer, by preventing generation of imperfect burying which is to be caused by gas discharge from an interlayer insulating film, when conductor is buried in a connecting hole opened on the interlayer insulating film containing a low permittivity film and a plug layer is formed. SOLUTION: After a viahole 24a extending to the surface of a polyaryl ether film 18 is opened by selectively etching a silicon oxide film 20, first thermal treatment is performed at 350 deg.C for 10 minutes, water content is discharged from a second interlayer insulating film 22, and water content in the second interlayer insulating film 22 is reduced. After that, the polyaryl ether film 18 is selectively etched, the viahole 24a extending the surface of a first wiring layer 16 is opened, second thermal treatment is performed at 350 deg.C for 5 minutes, and water content absorbed in the second interlayer insulating film 22 is discharged by exposure to the outside air when a semiconductor base substance is transferred to sputtering equipment.
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