| 摘要 |
PROBLEM TO BE SOLVED: To prevent metallic contamination on a semiconductor device and suppress deterioration thereof, by making out of carbon or silicon carbide the earth electrode of an etching apparatus using a plasma, and by covering with an insulation material including silicon compounds the surface portions of its mounting electrode which face the inside of its vacuum processing camber and wherefrom the surface of its mounting electrode portion of a substrate is excluded. SOLUTION: A gas fed from a gas feeding apparatus 10 to an etching processing chamber 4 is ionized with a microwave electric field and a magnetic field formed through a DC current fed from a magnetic-field generating DC power supply 8 to a solenoid coil 9. The pressure of the gas when etching a substrate 11 by the plasma is controlled by a vacuum exhauster 12. The energy of the incident ion beam on the substrate 11 is controlled by the high-frequency power fed from a high-frequency power supply 13 to a substrate mounting electrode 5. By the ions and radicals included in the plasma, the polysilicon of the substrate 11 put on the substrate mounting electrode 5 is etched. By using a substrate putting-on electrode cover 6 made of quartz and earth electrode 7 made of silicon carbide, the otherwise generations of Fe, Cr, Ni, Al from the substrate putting-on electrode 5 and from the earth electrode 7 made of material other than silicon carbide which become the metallic-contamination sources of the substrate 11 can be prevented when etching the substrate 11.
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