| 摘要 |
PROBLEM TO BE SOLVED: To prevent overetching without increasing lithography processes in number by a method wherein a polysilicon film and an insulating film are formed on a semiconductor substrate and shaped into a prescribed shape by etching for the formation of an gate electrode, and an etching stopper film is formed on all the surface. SOLUTION: A polysilicon film 103 and an insulating film 104 are formed on a semiconductor substrate. 101 and shaped into a prescribed shape by etching for the formation of a gate electrode, and then an etching stopper 105 is formed on all the surface. A contact hole is bored in an interlayer insulating film 106, the exposed part of the etching stopper 105 is removed, and a buried contact plug 108 is formed in the contact hole. Furthermore, an interlayer insulating film 109 is formed on all the surface, the interlayer insulating films 109 and 106 are etched, a contact hole 111 is formed, and then a buried contact plug is formed in the contact hole 111. |
