METHOD FOR FORMATION OF RESIST MASK FOR DRY ETCHING

摘要

PROBLEM TO BE SOLVED: To form a good resist mask by an easy method which protects electrodes against dry etching of a buffer layer. SOLUTION: After an electrode 6 is formed, a dry etching resist 7 is directly applied thereon without peeling a plating resist 5, exposed by using an exposure mask 8 in which a pattern of larger width than the electrode width is formed, and developed. Then the plating resist 5 is peeled and the layers are subjected to dry etching. As for the resist used for the plating resist 5 and for the dry etching resist 7, resist materials showing opposite negative-positive photosensitive characteristics to each other are used.