发明名称 ELECTROSTATIC CHUCK AND ITS MANUFACTURE
摘要 <p>PROBLEM TO BE SOLVED: To make scanty the occurrence amount of particles even when applying a high voltage and when using at high temperatures by a method wherein a support of an object to be attracted on a chuck face of an insulating substrate composed of a ceramic sintered compact is projected and fixed to the insulating substrate in a state such that the part is buried in the chuck face. SOLUTION: Heat-resistance, heat conductivity, and plasma-resistance are superior, and ceramics of an aluminum nitride sintered compact are used. An insulating substrate 2 has a multilayer structure, and is formed internally with chuck electrode layers 3, 4. The chuck electrode layer 3 of a positive pole and the chuck electrode layer 4 of a negative pole are together positioned in a layer close to a chuck face S1. Straight line parts 3a, 4a of the chuck electrode layers 3, 4 of different poles are disposed adjacently in the direction of the substrate face. A wafer support body 7 as a support of an object to be attracted Is provided on the chuck face S1. A lower face side of the wafer support body 7 is buried in the chuck face S1, so that the wafer support body 7 is fixed in a state of disabling to slip off from the insulating substrate 2. Thus, it is possible to decrease the occurrence of particles.</p>
申请公布号 JP2000277598(A) 申请公布日期 2000.10.06
申请号 JP19990081187 申请日期 1999.03.25
申请人 IBIDEN CO LTD 发明人 ITO YASUTAKA
分类号 B23Q3/15;H01L21/68;H01L21/683;(IPC1-7):H01L21/68 主分类号 B23Q3/15
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