| 摘要 |
PROBLEM TO BE SOLVED: To prevent a semiconductor device from deteriorating in electromigration resistance by a method wherein an interlayer insulating film with a recess is formed on a semiconductor substrate, a liner film is formed inside the recess, and a wiring layer that contains a coagulation restraining material is filled into the recess through the intermediary of the liner film. SOLUTION: A first interlayer insulating film 2 and a first wiring 3 are formed on an Si substrate 1, a second interlayer insulating film 4 is formed on the first insulating film 2, and a connection hole 5a for a connection hole 5a and a wiring groove 5b overlapping without the connection hole 5a are provided to the second interlayer insulating 4 through a photolithography method and an RIE method. An Nb liner film 6 is formed on the second interlayer insulating film 4 through a long slow sputtering method so as to cover the inner surface of the connection hole 5, then the Si substrate 1 is continuously transferred in a vacuum into a first Al sputtering chamber, and a wiring layer 7 containing coagulation restraining material is filled into the wiring groove 5b of the connection hole 5 through the intermediary of the Nb liner film 6. |
