发明名称 SOLID-STATE IMAGE SENSING DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce influence of a dark-time output upon a signal charge by providing a charge storing means which temporarily holds a signal charge from a light receiving means shaded from the outside light during the interval to its transfer. SOLUTION: A photoelectric converting sensor 11 forms a photodiode of pnp construction 18, 19, 25, and a received light signal is converted into electrons when light is received, and a signal charge converted photoelectrically according to the intensity of light and storage time is stored in the capacity of a pn junction 19, 25. A first read gate electrode 14 is caused to exist adjoining the converting sensor 11. Furthermore, a storing sensor 12 is caused to exist next to the gate electrode 14, and the potential of the pn junction 22, 25 of the storing sensor 12 is made deeper than that of the pn junction 18, 19 of the conveting sensor 11. When the voltage of a second read gate electrode 15 lowers, the potential of the first electrode 14 is raised, and the charge is transferred to the capacity of the pn junction 22, 25 of the storing sensor 12, stored and held here.
申请公布号 JP2000277720(A) 申请公布日期 2000.10.06
申请号 JP19990078419 申请日期 1999.03.23
申请人 SONY CORP 发明人 KAWAMOTO SEIICHI
分类号 H01L27/148;H04N5/335;H04N5/341;H04N5/357;H04N5/369;H04N5/372;(IPC1-7):H01L27/148 主分类号 H01L27/148
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