发明名称 RATIO CIRCUIT, LATCH CIRCUIT AND MOS TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To ensure a stable operation under a low power supply voltage by positively using a reverse short channel effect in a ratio circuit. SOLUTION: In this ratio circuit, an N channel MOS transistor 12 of one CMOS circuit 10 constitutes a driving element, and a P channel MOS transistor 18 of the other CMOS circuit 16 constitutes a load element. The drain terminals of those driving side N channel MOS transistor 12 and load side P channel MOS transistor 16 are electrically connected through a transfer gate 22 consisting of an N channel MOS transistor with each other. The driving side N channel MOS transistor is provided with a single channel CHa developing a reverse short channel effect. The load side MOS transistor 18 is provided with plural, for example, two cascade-connected channels CHb1 and CHb2 both developing reverse short channel effects.
申请公布号 JP2000278098(A) 申请公布日期 2000.10.06
申请号 JP19990079329 申请日期 1999.03.24
申请人 TEXAS INSTR JAPAN LTD 发明人 TAKAHASHI HIROSHI;TOYONO YUTAKA;IKEZAKI YASUMASA;URASAKI TORU;TAKEGAMA AKIHIRO
分类号 H03K3/037;H03K3/012;H03K3/356;(IPC1-7):H03K3/037 主分类号 H03K3/037
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