| 摘要 |
PROBLEM TO BE SOLVED: To obtain a block layer that is free from crystal defect by constituting a semiconductor laser so that it is provided with the block layer formed by, after formation of an active layer, forming a mixed crystal which can develop faulty lattice alignment due to compositional deviation on a flat plane by local growth. SOLUTION: A n-AlInP local growth layer 9 is formed by forming layers by first growth until a p-GaInP hetero-buffer layer 8 is formed, performing local wet etching until the surface of a p-GaInP etching stopper layer 6 is exposed, and thereafter using local growh. The n-AlIn local growth layer 9 is grown with constant plane orientation and compositional deviation due to difference in plane orientation does not occur. As a result, any crystal defect due to faulty lattice alignment is not produced in the n-AlIn local growth layer 9. Since an n-AlGaAs buried layer 10 hardly develops lattice constant deviation even if its composition is changed, any crystal defect is not produced here, either. Therefore, degradation in reliability due to crystal defect is prevented.
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