| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit device, in which a parasitic transistor based on an input protecting circuit is not generated. SOLUTION: In this integrated circuit device, a first one-way conducting element which allows a positive surge voltage inputted into an input terminal 1 escape to a power surge line, a second one-way conducting element which allows a negative surge voltage inputted into the terminal 1 escape to a ground line, and a photodetecting element are formed on an N-type semiconductor substrate. The first unidirectional conducting element is constituted of an N- channel MOS transistor 12.
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