发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit, wherein the variation of the temp. characteristic of elements due to temp. gradient can be reduced. SOLUTION: This semiconductor integrated circuit 10 has a power transistor 11 disposed on it and has an npn transistor 12, a pnp transistor 13 and a pnp transistor 14 mounted on it. Each element 12, 13, 14 varies its characteristics with temp. and hence is disposed at an equal distance Z from the power transistor 11 and the elements 12-14 are covered with an Al wiring 15. If the pnp transistors 13, 14 form a differential amplifier circuit, the Al wiring 15 having thermal conductivity higher than the substrate is effective for reducing the characteristics variation due to temp. gradient and averaging the thermal distribution and of course improves the pair property of the pnp transistors 13, 14.
申请公布号 JP2000277686(A) 申请公布日期 2000.10.06
申请号 JP19990086147 申请日期 1999.03.29
申请人 MITSUMI ELECTRIC CO LTD 发明人 NISHIDA YOSHIHISA;MAKIME MASAZO
分类号 H01L25/07;H01L21/822;H01L25/18;H01L27/04;(IPC1-7):H01L25/07 主分类号 H01L25/07
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