| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can reduce manufacturing cost by shortening manufacturing process of a semiconductor device which has the respective transistors where SIC regions are formed in an NPN-type and an NP-type transistors on the same substrate. SOLUTION: In this manufacturing method of a semiconductor device, collector regions 4, 9, base leading-out regions 5, 10, base regions 6, 11 and collector leading-out regions 7, 12 are independently formed in a forming region 50 of a first bipolar transistor 100 and a forming region 51 of a second bipolar transistor 200, on a semiconductor substrate 1. A base contact layer for forming an emitter electrode is formed also in the second bipolar transistor region 51 in the same process as a process forming an emitter electrode in the first bipolar transistor region 50. After that, an emitter electrode 26 is formed on a base contact layer.
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