| 摘要 |
PROBLEM TO BE SOLVED: To provide satisfactory matching with a measured result, and to easily adopt this method to a simulator with a fluid model as a base, and to obtain consideration of a quantum phenomenon in which a physically correct result can be obtained for carrier concentration distribution. SOLUTION: The potential valley shown by curves 81 and 82 is made narrow near a gate insulating film, an a carrier receivers large constraint from the shape of the potential. Therefore, a quantum phenomenon becomes large, and a base energyΓcan no be ignored. A turning point for the base energyΓis set at z0 (≠0), and the quantum phenomenon is taken into consideration based on approximation by ignoring the base energyΓat the right side, and the quantum phenomenon is also taken consideration based on approximation by introducing the base energyΓon the left side. A function for correction matched by the turning point z0 and a boundary face (z=0) is introduced, based on these two considerations. Thus, carrier concentration under the consideration of the potential on the boundary face can be obtained.
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