| 摘要 |
PROBLEM TO BE SOLVED: To enable a good bias characteristic, electrical stability to be obtained and a noise to be suppressed by forming the composition of an antiferromagnetic material layer of manganese, platinum, vanadium, chromium and titanium at specific ratios. SOLUTION: The composition of the antiferromagnetic material layer is preferably composed of in the ranges of 40 to 60 at.c% manganese, 40 to 60% platinum and 0.2 to 20 at.% in total of vanadium, chromium and titanium. Respective targets of tantalum, nickel-20 at.% iron alloy, copper, cobalt-10 at.% iron, Mn and alumina are used as sputtering targets for ceramic substrates. The composition is regulated by arranging chips of Pt and X (X: Au, Ag, Cu, V, Cr and Ti) of 1 centimeter square on the Mn target. Laminated films are formed by impressing high-frequency electric power to cathodes arranged with the respective targets to previously generate plasma in the apparatus and opening and closing the shutters arranged with each of the respective cathodes one by one, thereby successively forming the respective layers.
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