| 摘要 |
PROBLEM TO BE SOLVED: To provide a device constituted of thickness of the silicon layer of a bipolar part or a metal insulator semiconductor field effect transistor MISFET part of the thickness suitable for the device structure, and to provide a flat device structure having no difference in level in the boundary area, and a method for manufacturing the device. SOLUTION: A silicon oxide film is formed on a substrate, having a silicon layer 3 (SOI layer) in a thin-film thickness suitable for the formation of a fully depleted type MISFET, and then an opening 5 is formed. A sidewall 6 constituted of an insulator is formed on the sidewall of the opening 5, and then a single crystal silicon film 8 which is an epitaxial growth film is formed in the opening 5 by using a selective epitaxial growing method. Then, a CMP method is executed on the silicon oxide film on the silicon layer 3, the sidewall 6, and the single crystal silicon film 8 so that the silicon oxide film is removed and flattened. Afterwards, the MISFET is formed on the silicon layer 3, and a bipolar transistor is formed on the single crystal silicon film 8.
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