| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device favorable for a drive of an electrolyte capacitor microphone by enhancing one end of a parasitic capacitance due to an extended electrode that needs a large area in specific resistance. SOLUTION: An epitaxial layer 23 is formed on a semiconductor substrate 21 and this layer 23 is junction-isolated to form an insular region 25. An N-P-N transistor and a junction field effect transistor are formed at the insular region 25. An extended electrode 44 is formed in succession to a gate electrode of the junction field-effect transistor. An insulating film 43 of a partially thick film thickness is arranged under the lower part of the electrode 44 to reduce the value of a capacitance C1. Thereby, an outflow of a signal from the electrode 44 to a ground potential GND is prevented.
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