CLEANING METHOD OF SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To lessen micro defects such as pits produced on the surface of a silicon wafer when a silicon wafer is processed and to restrain the surface of a micro region on the silicon wafer from being roughened. SOLUTION: A first process 11 where a silicon wafer is oxidized,, and a second process 12 where the oxidized silicon wafer is reduced are repeatedly carried out. A silicon wafer is oxidized through a manner where it is dipped into a dissolved ozone water solution. The oxidized silicon wafer is reduced through a manner where it is dipped into a hydrofluoric acid or a mixed liquid of a hydrofluoric acid and an organic acid which contains a carboxyl group or an organic salt.