| 摘要 |
PROBLEM TO BE SOLVED: To etch selectively a chemically stable carbon film, by providing on a substrate a film having carbon as its main component, and by providing on this film a mask film having a blocking action against an ionized oxygenation-substance gas except for an uncovered region with this mask, and further, by removing therfrom the carbon film present in the uncovered region through the etching by the oxygenation-substance gas made into a plasma. SOLUTION: On a silicon substrate 31, the opening having therein the insulation film of a silicon oxide film 37 is provided to pattern thereon an electric wiring 32 made of the superconductive material of aluminum oxide, silicon oxide or silver oxide. Thereafter, there is provided a blocking layer 33 whereby the electric wiring 32 is not oxidized to change it into an insulator even when exposing it to the plasma atmosphere of an oxygenation-substance gas, and further, thereon a carbon film 34 is formed. A mask is provided on the portion other than the region wherefrom its carbon film 34 is removed by etching it in the plasma atmosphere of the oxygenation-substance gas. Then, a photoresist is provided on this mask. By using as a mask 35 the photoresist or a silicon oxide, the carbon film 34 is removed from an opening 36 present below the mask 35. By introducing a fluorination-sustance gas, a blocking layer 33' and the mask 35 present in the opening 36 are removed therefrom. |
