发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To enable switching the number of bits of storage data. SOLUTION: A row decoder C1 is arranged between first mats M1 and M2, and decoders R2, R3 are arranged between second mats M3, M4 and second mats M5, M6. Each decoder C1-C3 selects one side of adjacent mats and activates it in an operation mode, and activates both of adjacent mats in a second operation mode. Therefore, in the second operation mode, write-in and read-out of data having bit numbers being twice of the first operation mode can be performed.</p>
申请公布号 JP2000276879(A) 申请公布日期 2000.10.06
申请号 JP19990079730 申请日期 1999.03.24
申请人 SANYO ELECTRIC CO LTD 发明人 WATANABE MAKOTO;HASHIMOTO KUNIO;ITAGAKI TOSHIHIRO
分类号 G11C11/413;G11C11/401;G11C11/41;G11C16/02;H01L27/10;(IPC1-7):G11C11/413 主分类号 G11C11/413
代理机构 代理人
主权项
地址