| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory in which relieving can be surely performed even if a defective cell exists in a memory cell. SOLUTION: This semiconductor memory is provided with block cores 47-0 to 47-n being a unit when erased, a R/D block core 47-RD for relieving a memory cell array 51 in these block cores when defect is caused, a R/D address storing section 43 storing an address of a defective block core, and a R/D address comparing section 44 comparing an output signal AFi of a R/D address storing section 43 with an output signal ABLSi of a block address buffer 45. When a compared result is matched with, a block decoder 53 in the R/D block core 47-RD is made into a selection state, a block decoder 53 in a defective block core is made into a forced non-selection state, and a defective block core is replaced by a R/D block core 47-RD.</p> |
